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Result: Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model

Title:

Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model / E. Miranda, E. Piros, F. L. Aguirre, T. Kim, P. Schreyer, J. Gehrunger, T. Oster, K. Hofmann, J. Suñé, C. Hochberger, L. Alff

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Published in:

Institute of Electrical and Electronics Engineers. IEEE electron device letters. - New York, NY : IEEE, 1980-. - Online-Ressource. - Band 44, Heft 9 (2023), Seite 1551-1554
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Published:

New York, NY : IEEE, 2023

Format:

e-article

Language:

English

DOI:

10.1109/LED.2023.3298023

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