Result: Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model

*Title*:

Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model / E. Miranda, E. Piros, F. L. Aguirre, T. Kim, P. Schreyer, J. Gehrunger, T. Oster, K. Hofmann, J. Suñé, C. Hochberger, L. Alff

*Author/editor-in-chief*:

*Published in*:

Institute of Electrical and Electronics Engineers. IEEE electron device letters. - New York, NY : IEEE, 1980-. - Online-Ressource. - Band 44, Heft 9 (2023), Seite 1551-1554
*show_all_articles*

*Publication*:

New York, NY : IEEE, 2023

*Format*:

*eArticle*

*Language*:

*eng*

*DOI*:

10.1109/LED.2023.3298023

*Result*: Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model