*Result*: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
*Title*:
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices / Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
*Author/editor-in-chief*:
Petzold, Stefan (Verfasser) ; Zintler, Alexander (Verfasser) ; Eilhardt, Robert (Verfasser) ; Piros, Eszter (Verfasser) ; Kaiser, Nico (Verfasser) ; Sharath, Sankaramangalam Ulhas (Verfasser) ; Vogel, Tobias (Verfasser) ; Major, Márton (Verfasser) ; McKenna, Keith (Verfasser) ; Molina-Luna, Leopoldo (Verfasser) ; Alff, Lambert (Verfasser)
*Published in*:
Enthalten in: Advanced Electronic Materials. - 2019. - 10.1002/aelm.201900484. - ISSN 2199-160X. - Jahrgang 5, Heft 10
*Publication*:
Weinheim : Wiley-VCH, 2019
*Distribution*:
Darmstadt : Universitäts- und Landesbibliothek Darmstadt
*Physical description scale*:
1 Online-Ressource (9 Seiten)
*Format*:
*Language*:
*eng*
*Notes*:
kostenfrei
*DOI*:
10.26083/tuprints-00017041
*oa_rights*:
Open Access
CC BY 4.0
CC BY 4.0