Result: Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices
Title:
Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices / Taewook Kim, Tobias Vogel, Eszter Piros, Déspina Nasiou, Nico Kaiser, Philipp Schreyer, Robert Winkler, Alexander Zintler, Alexey Arzumanov, Stefan Petzold, Leopoldo Molina-Luna, Lambert Alff
Involved:
Kim, Taewook (Verfasser) ; Vogel, Tobias (Verfasser) ; Piros, Eszter (Verfasser) ; Nasiou, Déspina (Verfasser) ; Kaiser, Nico (Verfasser) ; Schreyer, Philipp (Verfasser) ; Eilhardt, Robert (Verfasser) ; Zintler, Alexander (Verfasser) ; Arzumanov, Alexey (Verfasser) ; Petzold, Stefan (Verfasser) ; Molina-Luna, Leopoldo (Verfasser) ; Alff, Lambert (Verfasser)
Published in:
Applied physics letters. - Melville, NY : American Inst. of Physics, 1962-. - Online-Ressource. - ISSN 1077-3118. - Band 122 (2023), Artikel-ID: 023502
Show all articles
Show all articles
Published:
Melville, NY : American Inst. of Physics, 2023
Format:
Language:
English
Notes:
kostenfrei
DOI:
10.1063/5.0124781
Open Access Rights:
Open Access
CC BY 4.0
CC BY 4.0