PASZUK, Agnieszka, HANNAPPEL, Thomas, GOBSCH, Gerhard und PASZKIEWICZ, Regina, 2018. Controlling Si(111) and Si(100) surfaces for subsequent Ga P heteroepitaxy in CVD ambient. Ilmenau: TU Ilmenau.
Elsevier - Harvard (with titles)Paszuk, A., Hannappel, T., Gobsch, G., Paszkiewicz, R., 2018. Controlling Si(111) and Si(100) surfaces for subsequent Ga P heteroepitaxy in CVD ambient. TU Ilmenau, Ilmenau. https://doi.org/urn:nbn:de:gbv:ilm1-2017000743
American Psychological Association 7th editionPaszuk, A., Hannappel, T., Gobsch, G., & Paszkiewicz, R. (ca. 2018). Controlling Si(111) and Si(100) surfaces for subsequent Ga P heteroepitaxy in CVD ambient [TU Ilmenau; Cd]. https://doi.org/urn:nbn:de:gbv:ilm1-2017000743
Springer - Basic (author-date)Paszuk A, Hannappel T, Gobsch G, Paszkiewicz R (2018) Controlling Si(111) and Si(100) surfaces for subsequent Ga P heteroepitaxy in CVD ambient. TU Ilmenau
Juristische Zitierweise (Stüber) (Deutsch)Paszuk, Agnieszka/ Hannappel, Thomas/ Gobsch, Gerhard/ Paszkiewicz, Regina, Controlling Si(111) and Si(100) surfaces for subsequent Ga P heteroepitaxy in CVD ambient, Ilmenau 2018.