Result: Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient

*Title*:

Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient / Agnieszka Paszuk ; Gutachter: Gerhard Gobsch, Regina Paszkiewicz ; Betreuer: Thomas Hannappel

*Author/editor-in-chief*:

*Publication*:

Ilmenau : TU Ilmenau, 2018

*Physical description scale*:

Online-Ressource

*Format*:

*eBook*

*Language*:

*eng*

*Dissertation note*:

Dissertation, Ilmenau, TU Ilmenau, 2017

*Subject Added Keywords*:

*Result*: Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient