• Tunneling field-effect transis...

*Result*: Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Title:
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Authors:
Zhao, Q. T., Yu, W. J., Zhang, B., Schmidt, M., Richter, S., Buca, D., Hartmann, J.-M., Luptak, R., Fox, A., Bourdelle, K. K., Mantl, S.
Source:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European. :251-254 Sep, 2011
Relation:
ESSDERC 2011 - 41st European Solid State Device Research Conference
Database:
IEEE Xplore Digital Library