SHEKARABI, Sahar, ZARE POUR, Mohammad Amin, SU, Haoqing, ZHANG, Wentao, HE, Chengxing, HANKE, Kai Daniel, ROMANYUK, Oleksandr, PASZUK, Agnieszka, JAEGERMANN, Wolfram, HU, Shu und HANNAPPEL, Thomas, 2025. Photoemission study of Ga N passivation layers and band alignment at Ga In P(100) heterointerfaces. American Chemical Society. ACS applied materials & interfaces. 2025. No. Band 17, Heft 4 (2025), Seite 7087-7097, p. , Heft 4 (2025), Seite 7087-7097. DOI 10.1021/acsami.4 c17453.
Elsevier - Harvard (with titles)Shekarabi, S., Zare Pour, M.A., Su, H., Zhang, W., He, C., Hanke, K.D., Romanyuk, O., Paszuk, A., Jaegermann, W., Hu, S., Hannappel, T., 2025. Photoemission study of Ga N passivation layers and band alignment at Ga In P(100) heterointerfaces. American Chemical Society. ACS applied materials & interfaces , Heft 4 (2025), Seite 7087-7097. https://doi.org/10.1021/acsami.4 c17453
American Psychological Association 7th editionShekarabi, S., Zare Pour, M. A., Su, H., Zhang, W., He, C., Hanke, K. D., Romanyuk, O., Paszuk, A., Jaegermann, W., Hu, S., & Hannappel, T. (ca. 2025). Photoemission study of Ga N passivation layers and band alignment at Ga In P(100) heterointerfaces [Electronic]. American Chemical Society. ACS applied materials & interfaces, Band 17, Heft 4 (2025), Seite 7087-7097, , Heft 4 (2025), Seite 7087-7097. https://doi.org/10.1021/acsami.4 c17453
Springer - Basic (author-date)Shekarabi S, Zare Pour MA, Su H, Zhang W, He C, Hanke KD, Romanyuk O, Paszuk A, Jaegermann W, Hu S, Hannappel T (2025) Photoemission study of Ga N passivation layers and band alignment at Ga In P(100) heterointerfaces. American Chemical Society. ACS applied materials & interfaces , Heft 4 (2025), Seite 7087-7097. https://doi.org/10.1021/acsami.4 c17453
Juristische Zitierweise (Stüber) (Deutsch)Shekarabi, Sahar/ Zare Pour, Mohammad Amin/ Su, Haoqing/ Zhang, Wentao/ He, Chengxing/ Hanke, Kai Daniel/ Romanyuk, Oleksandr/ Paszuk, Agnieszka/ Jaegermann, Wolfram/ Hu, Shu/ Hannappel, Thomas, Photoemission study of Ga N passivation layers and band alignment at Ga In P(100) heterointerfaces, American Chemical Society. ACS applied materials & interfaces 2025, , Heft 4 (2025), Seite 7087-7097.