*Result*: Growth and Fabrication of Quasi-1D vdWs Nanowires for Microelectronic Applications

*Advancing electronic devices requires not just new ideas but also the scalable and industry-friendly synthesis of innovative materials. As copper interconnects continue to shrink to the nanoscale, their resistivity rises sharply due to surface and grain boundary scattering, pushing the need for alternative solutions. Quasi-one-dimensional (quasi-1D) transition metal trichalcogenides, with their promising metallic properties, stand out as potential replacements. In our previous research, we successfully grew TaSe₃ nanowires with cross-sectional areas as small as 7 nm, and notably, their resistivity did not increase at these small scales. These nanowires also showed an electromigration activation energy twice that of copper and could handle current densities far beyond what copper can endure. These promising results highlight TaSe₃ as a viable candidate for downscaled electronic devices, a topic explored in detail in Chapter 1 as the driving motivation for this study.Chapter 2 dives into the history of the materials relevant to this research, focusing on transition metal trichalcogenides and elemental tellurium. It explores their unique electronic properties, which make them attractive alternatives to conventional interconnect materials. Chapter 3 shifts to the experimental side, describing the techniques used in this study, with a particular emphasis on the chemical vapor deposition (CVD) process. This process was adapted to grow ZrTe₃ and Te nanowires, overcoming specific challenges related to the activation properties of selenium and tellurium. The fine-tuning of CVD parameters led to the successful deposition of high-quality nanowires on SiO₂ substrates. Chapter 4 presents the results from these optimized processes, comparing the performance of ZrTe₃ and Te nanowires, and highlighting their impressive current-carrying capabilities and stability under varying conditions. These findings reinforce the potential of quasi-1D van der Waals materials for next-generation*