*Result*: Gate Stack Engineering in p-GaN HEMT Devices for Reliability Improvement
Title:
Gate Stack Engineering in p-GaN HEMT Devices for Reliability Improvement
Authors:
Source:
2025 IEEE 32nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) the Physical and Failure Analysis of Integrated Circuits (IPFA), 2025 IEEE 32nd International Symposium on. :1-4 Aug, 2025
Relation:
2025 IEEE 32nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Database:
IEEE Xplore Digital Library