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Result: The Influence of Charge Trapping Effects on GIT GaN-Based HEMTs

Title:

The Influence of Charge Trapping Effects on GIT GaN-Based HEMTs

Authors:

Ning, Y., Li, H., Zheng, X., Pan, C., Zhao, L.

Source:

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(11):6170-6177 Nov, 2025

Database:

IEEE Xplore Digital Library

*Result*: The Influence of Charge Trapping Effects on GIT GaN-Based HEMTs