• Experimental and Simulation St...

*Result*: Experimental and Simulation Study on the Failure Mechanism of GaN HD-GIT Under Overcurrent Stress

Title:
Experimental and Simulation Study on the Failure Mechanism of GaN HD-GIT Under Overcurrent Stress
Authors:
Jiang, X., Chen, J., Pan, C., Niu, H., Yuan, S., Li, X., Yan, Z., Gong, X., Wang, D., Wang, J.
Source:
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(9):4770-4779 Sep, 2025
Database:
IEEE Xplore Digital Library