• TCAD study of the detection me...

*Result*: TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors

Title:
TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors
Authors:
Silvestri, L., Reggiani, S., Passi, Vikram, Ravaux, Fabian, Dubois, E., Raskin, Jean-Pierre, 41st European Solid-State Device Research Conference – ESSDERC 2011
Publication Year:
2011
Collection:
DIAL@UCL (Université catholique de Louvain)
Subject Terms:
NANO
Document Type:
*Conference* conference object
Language:
English
Relation:
boreal:123520; http://hdl.handle.net/2078/123520
DOI:
10.1109/ESSDERC.2011.6044217
Availability:
http://hdl.handle.net/2078/123520
https://doi.org/10.1109/ESSDERC.2011.6044217
Accession Number:
edsbas.116CCA4A
Database:
BASE

*Further Information*

*An extensive simulation analysis of silicon-nanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.*